Full chip optical imaging of logic state evolution in CMOS circuits

Author

Kash, J.A. ; Tsang, J.C.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

934

Lastpage

936

Abstract

Measuring the logic state switching of individual devices in present and future sub-micron scale CMOS circuits poses substantial challenges. Here we show that hot electron light emission is generated as a subnanosecond pulse coincident with the normal switching of each individual FET in a CMOS circuit. This emission can be used to directly measure the propagation of signals through the individual gates in fully-functional CMOS circuits.

Keywords

CMOS logic circuits; hot carriers; integrated circuit testing; logic testing; CMOS circuit; FET; full chip optical imaging; hot electron light emission; logic state switching; signal propagation measurement; subnanosecond pulse; CMOS logic circuits; Electron emission; FETs; Logic devices; Optical imaging; Optical propagation; Optical pulse generation; Pulse circuits; Semiconductor device measurement; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554133

Filename

554133

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3428604