• DocumentCode
    3428628
  • Title

    High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding

  • Author

    Tu, S. Larry ; Tam, Gordon ; Tam, Pak M. ; Taomoto, Aileen

  • Author_Institution
    Adv. Custom Technol. Center, Motorola Inc., Mesa, AZ, USA
  • fYear
    1995
  • fDate
    2-3 Oct 1995
  • Firstpage
    206
  • Lastpage
    208
  • Abstract
    A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n+ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm2 and a turn-off fall time less than 100 nanoseconds are achieved
  • Keywords
    insulated gate bipolar transistors; power transistors; wafer bonding; 1.4 V; 600 V; 70 ns; Si; Si wafer bonding; heavily-doped n+ buffer layer; high-speed IGBT; insulated-gate bipolar transistors; Buffer layers; Charge carrier lifetime; Doping; Implants; Insulated gate bipolar transistors; Insulation; Medical simulation; Silicon; Voltage control; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-2778-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.1995.493899
  • Filename
    493899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3428628