Title :
Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon
Author :
Asaumi, Kazuo ; Iriye, Yasuroh ; Sato, Kazuo
Author_Institution :
Fuji Res. Inst. Corp., Tokyo, Japan
Abstract :
We have developed an anisotropic-chemical-etching process simulation system, MICRO-CAD, which is equipped with a database of orientation dependent etching rates of single crystal silicon. When crystallographic orientation of the wafer, mask pattern, etching media and etching conditions such as its concentration and temperature are given, it calculates 3D etching profiles according to the etching time increments
Keywords :
digital simulation; electronic engineering computing; elemental semiconductors; etching; silicon; 3D etching profiles; MICROCAD; Si; Si single crystal; anisotropic-chemical-etching process; concentration; crystallographic orientation; mask pattern; simulation; temperature; wafer; Analytical models; Anisotropic magnetoresistance; Crystallography; Databases; Etching; Graphical user interfaces; Graphics; Shape; Silicon compounds; Temperature;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581877
