Title :
Improved linearity CMOS active resistor structure
Author_Institution :
Univ. Politeh. of Bucharest, Bucharest, Romania
Abstract :
Original low-power low-voltage active resistor structure with improved performances will be presented. The linearity is strongly increased by implementing an original technique, using a proper current biasing of the differential core. The structures are implemented in 0.35μm CMOS technology and are supplied at ±3V. The circuits present a very good linearity (in the worst case, THD <;0.4%), correlated with an extended range of the input voltage (at least ±0.5V). The tuning range of the active resistors is about hundreds KΩ - MΩ.
Keywords :
CMOS integrated circuits; low-power electronics; resistors; CMOS; current biasing; linearity; low-power active resistor structure; low-voltage active resistor structure; size 0.35 mum; tuning; voltage 3 V; CMOS integrated circuits; CMOS technology; Differential amplifiers; Linearity; Resistance; Resistors; Semiconductor device modeling; Linearity; VLSI design; active resistor circuit; computational circuits;
Conference_Titel :
EUROCON, 2013 IEEE
Conference_Location :
Zagreb
Print_ISBN :
978-1-4673-2230-0
DOI :
10.1109/EUROCON.2013.6625244
