High density LED display panel on silicon microreflector and integrated circuit

Author

Takahashi, Kohrou ; Tadokoro, Nobuyuki ; Takeuchi, Satoshi

Author_Institution

Dept. of Electron., Saitama Univ., Urawa, Japan

fYear

1995

fDate

4-6 Dec 1995

Firstpage

272

Lastpage

275

Abstract

Two types of high density light-emitting-diode (LED) array units for a display panel were fabricated using LED chips. One is so made that LED chips are mounted on a silicon microreflector. The reflector was formed on a (100) silicon wafer by anisotropic chemical etching. LEDs on the unit are arrayed in a matrix structure and the strength of light emission is controlled by the pulse width of the current into the LEDs. The other has a complex structure with integrated circuits for driving the LED. The driving circuits, on which LED chips are mounted, hold and control the selected LED currents. The latter is superior to the former in brightness of the display

Keywords

LED displays; arrays; brightness; driver circuits; etching; integrated circuit technology; integrated optoelectronics; light reflection; (100) Si wafer; LED array units; LED chips; Si; Si microreflector; Si-SiO₂; anisotropic chemical etching; current pulse width; display brightness; driving circuits; high density LED display panel; integrated circuit; light emission strength control; matrix structure; Anisotropic magnetoresistance; Chemicals; Circuits; Displays; Etching; Light emitting diodes; Lighting control; Optical arrays; Silicon; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International

Conference_Location

Omiya

Print_ISBN

0-7803-3622-4

Type

conf

DOI

10.1109/IEMT.1995.541043

Filename

541043