Title :
Diamond nucleation by activated CVD
Author_Institution :
Inst. of Phys. Chem., Acad. of Sci., Moscow, Russia
Abstract :
Summary form only given. The authors compare experimental observations on diamond nucleation with relative data connected with other substances adhering in finely dividing state to the nonidentical substrates. The most important phenomena closely controlling diamond nucleation by CVD are: vapor phase content, crystallization temperature, substrate nature and others.
Keywords :
chemical vapour deposition; crystallisation; diamond; elemental semiconductors; nucleation; semiconductor thin films; C; CVD; crystallization temperature; diamond; thin films; vapor phase content; Atomic measurements; Crystallization; Etching; Hydrogen; Joining processes; Process control; Solids; Substrates; Temperature control; Thermodynamics;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946538
