• DocumentCode
    3429168
  • Title

    Diamond nucleation by activated CVD

  • Author

    Spitsyn, B.V.

  • Author_Institution
    Inst. of Phys. Chem., Acad. of Sci., Moscow, Russia
  • fYear
    2001
  • fDate
    26-30 June 2001
  • Firstpage
    25
  • Abstract
    Summary form only given. The authors compare experimental observations on diamond nucleation with relative data connected with other substances adhering in finely dividing state to the nonidentical substrates. The most important phenomena closely controlling diamond nucleation by CVD are: vapor phase content, crystallization temperature, substrate nature and others.
  • Keywords
    chemical vapour deposition; crystallisation; diamond; elemental semiconductors; nucleation; semiconductor thin films; C; CVD; crystallization temperature; diamond; thin films; vapor phase content; Atomic measurements; Crystallization; Etching; Hydrogen; Joining processes; Process control; Solids; Substrates; Temperature control; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
  • Conference_Location
    Zakopane, Poland
  • Print_ISBN
    0-7803-7136-4
  • Type

    conf

  • DOI
    10.1109/WBL.2001.946538
  • Filename
    946538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3429168