Preliminary design of wideband microwave amplifier using SMT package SiGe heterojunction bipolar transistor

Microwave and RP transistors are used as amplifiers, oscillators, switches, mixers and active filters. Most of this applications use either Si BJT or GaAs FET. In today´s high frequency application (> 10 GHz), most amplifiers use GaAs FET as it can go well beyond 10 GHz. However GaAs FET cost is higher compared to Si BJT. New Si BJT using compound material, SiGe HBT extends the frequency range of normal Si based BJT to higher frequency. In this work, surface mount device (SMD) SiGe HBT from Infineon is used in the design of wideband microwave amplifier (WMA). The amplifier is expected to exhibit wide bandwidth and up to 10 GHz. ADS simulator is used to simulate the preliminary design and optimize layout. Electrical results in the form of gain, isolation and input and output impedance match are discussed. An optimized layout of WMA is proposed