Thin films of wide band gap II-VI compounds grown by atomic layer epitaxy-properties and application

Author

Godlewski, M.

Author_Institution

Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

27

Abstract

The growth technique atomic layer epitaxy (ALE) has been optimised to produce large area and efficient thin film electroluminescent (TFEL) devices. The author briefly reviews the advantages of the ALE growth technique and its applications. He then describes in more detail various attempts to get a bright multi-colour light emission from wide band gap II-VI semiconductor ALE films, and explains the mechanisms of emission excitation in TFEL structures. Competing approaches to obtain bright blue, green and red electroluminescence are described and analysed.

Keywords

II-VI semiconductors; atomic layer epitaxial growth; electroluminescence; electroluminescent devices; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; atomic layer epitaxy; electroluminescence; thin film electroluminescence devices; wide band gap II-VI compounds; Atomic layer deposition; Content addressable storage; Earth; Electroluminescent devices; Epitaxial growth; Physics; Thin film devices; Transistors; Wideband; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946540

Filename

946540