Title :
Thin films of wide band gap II-VI compounds grown by atomic layer epitaxy-properties and application
Author_Institution :
Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland
Abstract :
The growth technique atomic layer epitaxy (ALE) has been optimised to produce large area and efficient thin film electroluminescent (TFEL) devices. The author briefly reviews the advantages of the ALE growth technique and its applications. He then describes in more detail various attempts to get a bright multi-colour light emission from wide band gap II-VI semiconductor ALE films, and explains the mechanisms of emission excitation in TFEL structures. Competing approaches to obtain bright blue, green and red electroluminescence are described and analysed.
Keywords :
II-VI semiconductors; atomic layer epitaxial growth; electroluminescence; electroluminescent devices; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; atomic layer epitaxy; electroluminescence; thin film electroluminescence devices; wide band gap II-VI compounds; Atomic layer deposition; Content addressable storage; Earth; Electroluminescent devices; Epitaxial growth; Physics; Thin film devices; Transistors; Wideband; Zinc compounds;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946540
