• DocumentCode
    3429237
  • Title

    The electronic application of materials from the B-N-C-Si compositional tetrahedron

  • Author

    Badzian, A.

  • Author_Institution
    Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2001
  • fDate
    26-30 June 2001
  • Firstpage
    31
  • Abstract
    The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.
  • Keywords
    Raman spectra; boron compounds; nucleation; scanning tunnelling microscopy; surface structure; B-N-C-Si; Raman spectrum; STM; films; nucleation; Boron; Chemical vapor deposition; Composite materials; Conducting materials; Crystalline materials; Crystallization; Laboratories; Optical materials; Semiconductor films; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
  • Conference_Location
    Zakopane, Poland
  • Print_ISBN
    0-7803-7136-4
  • Type

    conf

  • DOI
    10.1109/WBL.2001.946541
  • Filename
    946541