DocumentCode :
3429237
Title :
The electronic application of materials from the B-N-C-Si compositional tetrahedron
Author :
Badzian, A.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear :
2001
fDate :
26-30 June 2001
Firstpage :
31
Abstract :
The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.
Keywords :
Raman spectra; boron compounds; nucleation; scanning tunnelling microscopy; surface structure; B-N-C-Si; Raman spectrum; STM; films; nucleation; Boron; Chemical vapor deposition; Composite materials; Conducting materials; Crystalline materials; Crystallization; Laboratories; Optical materials; Semiconductor films; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
Type :
conf
DOI :
10.1109/WBL.2001.946541
Filename :
946541
Link To Document :
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