DocumentCode
3429237
Title
The electronic application of materials from the B-N-C-Si compositional tetrahedron
Author
Badzian, A.
Author_Institution
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
2001
fDate
26-30 June 2001
Firstpage
31
Abstract
The B-N-C-Si system compiles crystalline and disordered phases which combine exceptional electronic band structures, hardness and other mechanical properties and some kind of chemical inertness. Electronic application of materials from B-C-N-Si compositional tetrahedron are successful in many respects but also poses many problems and obstacles in the development of practical devices. These problems are related in part to the growth processes and growth defccts because of difficulty of matching the requirements for the electronic devices with the real materials. This review follows a sequence from the quatemary B-C-N-Si phases to diamond. There is a renewed interest in the synthesis of Si-N-C ceramic bodies using polysilazancs as precursors.
Keywords
Raman spectra; boron compounds; nucleation; scanning tunnelling microscopy; surface structure; B-N-C-Si; Raman spectrum; STM; films; nucleation; Boron; Chemical vapor deposition; Composite materials; Conducting materials; Crystalline materials; Crystallization; Laboratories; Optical materials; Semiconductor films; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946541
Filename
946541
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