DocumentCode
3429285
Title
Surface processing in advanced microelectronic technology
Author
Ruzyllo, J.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2001
fDate
26-30 June 2001
Firstpage
41
Abstract
Summary form only given. Provides an overview of key issues related to surface processing in silicon microelectronics technology. The objective is to underscore the fact that in future generation microelectronics manufacturing technologies ever increasing attention will be paid to the methods and tools used to process, control and characterize properties of the silicon surface. Specific approaches to silicon surface processing and characterization will be considered. To a significant degree the requirements concerning surface processing in silicon device technology apply to the manufacturing of devices using wide bandgap semiconductors (e.g. 2.5 eV). Among them two materials of greatest practical importance at this time are SiC and GaN. Some aspects of surface processing in SiC and GaN device fabrication will also be discussed.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; silicon; silicon compounds; surface treatment; wide band gap semiconductors; GaN; Si; SiC; advanced microelectronic technology; characterization; device fabrication; device performance; near-surface region; overview; properties; semiconductor device structures; silicon; surface processing; surface region; wide bandgap semiconductors; Character generation; Gallium nitride; Manufacturing processes; Microelectronics; Process control; Semiconductor device manufacture; Semiconductor materials; Silicon carbide; Silicon devices; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946544
Filename
946544
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