• DocumentCode
    3429285
  • Title

    Surface processing in advanced microelectronic technology

  • Author

    Ruzyllo, J.

  • Author_Institution
    Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2001
  • fDate
    26-30 June 2001
  • Firstpage
    41
  • Abstract
    Summary form only given. Provides an overview of key issues related to surface processing in silicon microelectronics technology. The objective is to underscore the fact that in future generation microelectronics manufacturing technologies ever increasing attention will be paid to the methods and tools used to process, control and characterize properties of the silicon surface. Specific approaches to silicon surface processing and characterization will be considered. To a significant degree the requirements concerning surface processing in silicon device technology apply to the manufacturing of devices using wide bandgap semiconductors (e.g. 2.5 eV). Among them two materials of greatest practical importance at this time are SiC and GaN. Some aspects of surface processing in SiC and GaN device fabrication will also be discussed.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; silicon; silicon compounds; surface treatment; wide band gap semiconductors; GaN; Si; SiC; advanced microelectronic technology; characterization; device fabrication; device performance; near-surface region; overview; properties; semiconductor device structures; silicon; surface processing; surface region; wide bandgap semiconductors; Character generation; Gallium nitride; Manufacturing processes; Microelectronics; Process control; Semiconductor device manufacture; Semiconductor materials; Silicon carbide; Silicon devices; Wide band gap semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
  • Conference_Location
    Zakopane, Poland
  • Print_ISBN
    0-7803-7136-4
  • Type

    conf

  • DOI
    10.1109/WBL.2001.946544
  • Filename
    946544