Title :
Plasma processes for formation of electronic structures with wide bandgap material layers
Author :
Jakubowski, A. ; Beck, R.B. ; Szmidt, J. ; Werbowy, A.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
The authors discuss the role of plasma processing in standard Si vs. wide bandgap materials technology. They consider the specific problems of plasma processing and their consequences in wide band gap semiconductor technology.
Keywords :
integrated circuit technology; ion implantation; plasma deposition; semiconductor doping; sputter etching; wide band gap semiconductors; RIE; dry etching; energetic ions-surface interactions; lCs technology; plasma assisted deposition; plasma etching; plasma processing; shallow implantation; wide bandgap materials technology; Art; Etching; Materials science and technology; Microelectronics; Photonic band gap; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Random access memory;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946547
