DocumentCode
3429331
Title
Plasma processes for formation of electronic structures with wide bandgap material layers
Author
Jakubowski, A. ; Beck, R.B. ; Szmidt, J. ; Werbowy, A.
Author_Institution
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
51
Lastpage
64
Abstract
The authors discuss the role of plasma processing in standard Si vs. wide bandgap materials technology. They consider the specific problems of plasma processing and their consequences in wide band gap semiconductor technology.
Keywords
integrated circuit technology; ion implantation; plasma deposition; semiconductor doping; sputter etching; wide band gap semiconductors; RIE; dry etching; energetic ions-surface interactions; lCs technology; plasma assisted deposition; plasma etching; plasma processing; shallow implantation; wide bandgap materials technology; Art; Etching; Materials science and technology; Microelectronics; Photonic band gap; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946547
Filename
946547
Link To Document