Title :
Effects of high-temperature rapid thermal annealing on the residual stress of LPCVD-polysilicon thin films
Author :
Zhang, Xin ; Zhang, Tong-Yi ; Wong, Man ; Zohar, Yitshak
Author_Institution :
Dept. of Mech. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
The effects of regular furnace and high-temperature rapid thermal annealing (RTA) on the residual stress of LPCVD-polysilicon thin films were investigated. The as-deposited 0.5 μm thick polysilicon films had an initial compressive stress of about 340 MPa, and the residual stress was relaxed quickly after a few cycles of RTA at the higher temperatures. The stress variation with annealing time at temperatures of 900-1150°C was analyzed. Using X-ray diffraction (XRD), micro-Raman spectroscopy and transmission electron microscopy (TEM), the changes in the microstructure of the thin films, induced by the RTA, during the stress relaxation were studied. Compared to regular furnace annealing, rapid thermal annealing can reduce stress in a shorter time and is an effective method for releasing the residual stress in polysilicon thin films
Keywords :
CVD coatings; Raman spectra; X-ray diffraction; elemental semiconductors; internal stresses; rapid thermal annealing; semiconductor thin films; silicon; stress relaxation; transmission electron microscopy; 0.5 micron; 900 to 1150 C; LPCVD polysilicon thin films; Si; TEM; X-ray diffraction; high-temperature RTA; micro-Raman spectroscopy; microstructure; rapid thermal annealing; residual stress; stress relaxation; transmission electron microscopy; Compressive stress; Furnaces; Rapid thermal annealing; Residual stresses; Spectroscopy; Temperature; Thermal stresses; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581922
