DocumentCode
3429528
Title
The influence of Ar-N/sub 2/ plasma conditions on GaN thin film deposition by reactive magnetron sputtering
Author
Stanczyk, B. ; Jagoda, A.
Author_Institution
Inst. of Electron. Mater. Technol., Warsaw, Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
103
Lastpage
104
Abstract
Summary form only given. This paper presents some problems concerning the technology of GaN thin films fabrication using RF sputtering from a Ga target in Ar-N/sub 2/ gas mixtures.
Keywords
III-V semiconductors; gallium compounds; photoluminescence; refractive index; scanning electron microscopy; secondary ion mass spectra; semiconductor thin films; sputter deposition; stoichiometry; wide band gap semiconductors; Ar-N/sub 2/; Ar-N/sub 2/ plasma; GaN; SEM; SIMS; film thickness; photoluminescence; reactive magnetron sputtering; refractive index; stoichiometry; thin film; Artificial intelligence; Gallium nitride; Plasmas; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946558
Filename
946558
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