X-ray diffraction study on ELOG (epitaxial lateral overgrowth) GaN layers

Summary form only given. The authors present X-ray diffraction data obtained for GaN ELOG samples grown using MOVPE on a sapphire substrate and using a 10 nm thick SiN mask. It can be seen that the lattice parameter c is larger than for the buffer layer, whereas the situation is opposite for the lattice parameter a. For the masked region, the dislocation density is significantly reduced, but this is an additional source of strain between the mask and window regions.