Title :
A monolithic CMOS/MEMS accelerometer with zero-g calibration readout circuit
Author :
Yu-Sian Liu ; Chien-Jo Huang ; Fu-Yen Kuo ; Kuei-Ann Wen ; Long-Sheng Fan
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A monolithic accelerometer design with zero-g calibration with TSMC 0.18 μm mixed-signal 1P6M process is presented. On-chip digital offset calibration enables compensation of random mechanical offset in the sensor due to process variation. The maximum 21 fF capacitance mismatch can be calibrated. The simulation results show that the whole system have 452.1 mV/g sensitivity. The power consumption is about 1.16 mW. The output noise is 26.85 μg/√Hz at 1KHz.
Keywords :
accelerometers; calibration; microsensors; monolithic integrated circuits; mixed-signal 1P6M process; monolithic CMOS-MEMS accelerometer design; on-chip digital offset calibration; random mechanical offset; zero-g calibration readout circuit; Accelerometers; CMOS integrated circuits; Calibration; Capacitance; Noise; Radiation detectors; Registers; Accelerometer; Capacitive Readout; Offset Calibration; Readout Circuit; Zero-g Calibration;
Conference_Titel :
EUROCON, 2013 IEEE
Conference_Location :
Zagreb
Print_ISBN :
978-1-4673-2230-0
DOI :
10.1109/EUROCON.2013.6625271
