DocumentCode
3429949
Title
Temperature dependence of optical parameters of GaS
Author
Kepinska, M. ; Murri, R. ; Nowak, M. ; Szalajko, M.
Author_Institution
Inst. of Phys., Silesian Univ. of Technol., Katowice, Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
145
Abstract
Summary form only given. GaS is a wide gap layered semiconductor. It has potentially many applications in optoelectronics. The presented work reports the temperature dependencies (77 K\n\n\t\t
Keywords
III-VI semiconductors; absorption coefficients; energy gap; gallium compounds; refractive index; wide band gap semiconductors; 1.18 to 6.2 eV; 77 to 335 K; GaS; absorption coefficient; anisotropy coefficient; optical energy gap; refractive index; temperature dependence; wide gap semiconductor; Anisotropic magnetoresistance; Geometrical optics; III-V semiconductor materials; Optical refraction; Optical variables control; Physics; Refractive index; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946580
Filename
946580
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