Title :
Temperature dependence of optical parameters of GaS
Author :
Kepinska, M. ; Murri, R. ; Nowak, M. ; Szalajko, M.
Author_Institution :
Inst. of Phys., Silesian Univ. of Technol., Katowice, Poland
Abstract :
Summary form only given. GaS is a wide gap layered semiconductor. It has potentially many applications in optoelectronics. The presented work reports the temperature dependencies (77 K\n\n\t\t
Keywords :
III-VI semiconductors; absorption coefficients; energy gap; gallium compounds; refractive index; wide band gap semiconductors; 1.18 to 6.2 eV; 77 to 335 K; GaS; absorption coefficient; anisotropy coefficient; optical energy gap; refractive index; temperature dependence; wide gap semiconductor; Anisotropic magnetoresistance; Geometrical optics; III-V semiconductor materials; Optical refraction; Optical variables control; Physics; Refractive index; Temperature dependence;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946580
