Basic properties of AlN layers deposited onto SiC

Author

Klimczak, K. ; Szmidt, J. ; Olszyna, A. ; Bakowski, M. ; Barcz, A.

Author_Institution

Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol., Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

149

Lastpage

150

Abstract

Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.

Keywords

III-V semiconductors; aluminium compounds; ellipsometry; mass spectroscopic chemical analysis; plasma deposited coatings; scanning electron microscopy; secondary ion mass spectra; semiconductor heterojunctions; semiconductor thin films; surface structure; thickness measurement; wide band gap semiconductors; AlN; AlN layers; AlN-SiC interface; SEM; SIMS; SiC; SiC substrate; basic properties; chemical composition; current-voltage characteristics; electrical properties; layer thickness; reactive pulse plasma method; scanning electron microscopy; secondary ion mass spectroscopy; spectroscopic ellipsometry; surface structure; Chemicals; Current-voltage characteristics; Mass spectroscopy; Plasma chemistry; Plasma measurements; Plasma properties; Scanning electron microscopy; Semiconductor films; Silicon carbide; Surface structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946583

Filename

946583