Title :
Basic properties of AlN layers deposited onto SiC
Author :
Klimczak, K. ; Szmidt, J. ; Olszyna, A. ; Bakowski, M. ; Barcz, A.
Author_Institution :
Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol., Poland
Abstract :
Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.
Keywords :
III-V semiconductors; aluminium compounds; ellipsometry; mass spectroscopic chemical analysis; plasma deposited coatings; scanning electron microscopy; secondary ion mass spectra; semiconductor heterojunctions; semiconductor thin films; surface structure; thickness measurement; wide band gap semiconductors; AlN; AlN layers; AlN-SiC interface; SEM; SIMS; SiC; SiC substrate; basic properties; chemical composition; current-voltage characteristics; electrical properties; layer thickness; reactive pulse plasma method; scanning electron microscopy; secondary ion mass spectroscopy; spectroscopic ellipsometry; surface structure; Chemicals; Current-voltage characteristics; Mass spectroscopy; Plasma chemistry; Plasma measurements; Plasma properties; Scanning electron microscopy; Semiconductor films; Silicon carbide; Surface structures;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946583
