The influence of plasma RF processes on nitride (BN, AlN, CN) layers

Summary form only given. This work shows the possibilities of plasma enhanced selective etching of certain nitride layers. They were deposited using different methods, such as the reactive pulse plasma method. The films were etched in the PLASMA LAB OXFORD 80+ station. Trying to achieve the best results, different gas mixture atmosphere and pressures were used. The plasma was obtained in air as well as CF/sub 4/ and Ar-gas mixture atmosphere, dosed in 4:1 relation. The obtained results were used to characterise the nitrides etching process (its rate and the quality of the edges). The main goal was to keep the highest possible isotropy of the developed edges and to achieve the highest speed of etching. It was obtained by decreasing pressure down to 30 mTorr. A series of experiments was carried out in such a way that the plasma parameters best fit the isotropic films etching The obtained results will help to elaborate new electronic devices with nitride layers as dielectric or semiconductor silicon-nitride heterostructures.