Title :
AlN for mirror passivation of high power AlGaAs single quantum well separate confinement heterostructure lasers
Author :
Jagoda, A. ; Dobrzanski, L. ; Mozdzonek, M. ; Wrobel, S.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.
Keywords :
III-V semiconductors; aluminium compounds; dielectric thin films; laser mirrors; optical films; passivation; quantum well lasers; reflectivity; AlGaAs; AlN; AlN dielectric layer; AlN-Si; AlN-Si layers; SQW-SCH laser diodes; high power single quantum well separate confinement heterostructure lasers; high reflective coating; low reflective coating; mirror coating; mirror passivation; optical output power characteristics; reflection coefficients; semitransparent coating; Coatings; Dielectrics; Diodes; Mirrors; Optical resonators; Passivation; Potential well; Power generation; Quantum well lasers; Thermal conductivity;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946596
