Current-voltage characteristics of 4H-SiC diodes with Ni contacts

Author

Sochacki, M. ; Bakowski, M. ; Szmidt, J. ; Werbowy, A.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

197

Lastpage

198

Abstract

Summary form only given. Results of research on the electric properties of Ni contacts on n-type 4H-SiC are presented. The forward and reverse I-V measurements of Ni/4H-SiC Schottky rectifiers are demonstrated. The studies showed degradation of the structures over time. The lack of passivation probably caused the increase of leakage current. The scatter of Schottky diode parameters like the ideality factor, the saturation current density, the series resistance and the Schottky barrier height were studied. The Schottky barrier height was calculated from I-V characteristics measured at room temperature.

Keywords

Schottky barriers; Schottky diodes; current density; leakage currents; nickel; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 4H-SiC/Ni contacts; Ni-SiC; Schottky barrier height; Schottky diode; Schottky rectifiers; current-voltage characteristics; electric properties; forward I-V measurements; ideality factor; leakage current; n-type 4H-SiC; reverse I-V measurements; saturation current density; series resistance; Current-voltage characteristics; Degradation; Electrical resistance measurement; Leakage current; Passivation; Rectifiers; Scattering parameters; Schottky barriers; Schottky diodes; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946604

Filename

946604