Titanium oxide produced by plasma technology for MOS structures

Author

Dusinski, E. ; Szmidt, J. ; Zdunek, K. ; Elert, M. ; Barcz, A.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

206

Lastpage

207

Abstract

The authors study TiO/sub 2/ layers produced by Reactive Pulse Plasma (RPP) deposition on semiconductor substrates. The layers have been investigated both in terms of structure and electrophysical properties. The thickness and refractive index, the structure and the chemical composition were examined by ellipsometry, SEM and SIMS, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS structures were determined. The layers obtained show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectric gate.

Keywords

MIS structures; MISFET; dielectric thin films; plasma deposition; refractive index; scanning electron microscopy; secondary ion mass spectra; titanium compounds; C-V characteristics; I-V characteristics; MIS transistors; MOS structures; SEM; SIMS; TiO/sub 2/; chemical composition; ellipsometry; reactive pulse plasma deposition; refractive index; semiconductor substrates; thickness; Capacitance-voltage characteristics; Chemical technology; Dielectrics; Ellipsometry; Mechanical factors; Plasma chemistry; Plasma properties; Refractive index; Substrates; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946608

Filename

946608