The double gate lateral inversion layer emitter transistor-a novel power device concept with a dynamic emitter

Author

Udrea, Florin ; Amaratunga, Gehan A J

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

1996

fDate

29 Sep-1 Oct 1996

Firstpage

73

Lastpage

76

Abstract

A novel device concept termed the Double Gate Lateral Inversion Layer Emitter Transistor (DG LILET) is proposed and demonstrated experimentally. The device is based on a new physical injection mechanism. This is the use of a MOS inversion layer as a minority carrier injector. The DG ILET can operate in three distinctive modes, MOSFET, transistor and thyristor as function of the potentials applied to the cathode and anode gates. The device offers a high switching frequency, a large safe operating area and a flexible on-state operation and therefore is a promising candidate for high voltage, fast speed devices for integrated circuits

Keywords

inversion layers; power transistors; DG LILET; MOS inversion layer; MOSFET; double gate lateral inversion layer emitter transistor; dynamic emitter; high voltage fast speed device; integrated circuit; minority carrier injection; on-state operation; power device; safe operating area; switching frequency; thyristor; Anodes; Cathodes; Conductivity; Diodes; Electrons; MOSFET circuits; Power engineering and energy; Semiconductor optical amplifiers; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1996., Proceedings of the 1996

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3516-3

Type

conf

DOI

10.1109/BIPOL.1996.554143

Filename

554143