3-watt Q-band waveguide PHEMT MMIC power amplifier module

Author

Lester, J.A. ; Chi, J. ; Lai, R. ; Biedenbender, M. ; Garske, D. ; Rordan, R. ; Chow, P.D.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

539

Abstract

Presented is a 3 watt Q-band PHEMT MMIC power amplifier module with a peak efficiency of 25% at 44.5 GHz, believed to be the highest reported at this power level and frequency. The waveguide power amplifier module features the use of thinned 2-mil GaAs MMICs with off-chip output matching and combining on a 5-mil alumina substrate.

Keywords

HEMT integrated circuits; MMIC power amplifiers; alumina; field effect MIMIC; gallium arsenide; hybrid integrated circuits; microstrip circuits; millimetre wave amplifiers; millimetre wave devices; modules; power amplifiers; power combiners; 2 mil; 25 percent; 3 W; 44.5 GHz; 5 mil; Al/sub 2/O/sub 3/; EHF; GaAs; MM-wave operation; PHEMT MMIC power amplifier; Q-band; alumina substrate; offchip output combining; offchip output matching; pseudomorphic HEMT; waveguide power amplifier module; Impedance matching; MMICs; Microstrip; Multichip modules; PHEMTs; Power amplifiers; Probes; Resistors; Substrates; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602850

Filename

602850