Title :
Thin film resonator (TFR) low insertion loss filters
Author :
Kline, G.R. ; Lakin, K.M. ; Ketcham, R.S.
Author_Institution :
Microelectron. Res. Center, Iowa State Univ., Ames, IA, USA
Abstract :
Progress on the TFR SCF (stacked crystal filter) configurations is reported including device performance, modeling, design, and materials requirements. Both Si- and GaAs-substrate-based filters are reported with GaAs receiving increased emphasis for microwave integrated circuit applications. The experimental results reported are the result of a number of device feasibility studies done in the course of developing the technology toward its fully integrated form. Filters having insertion losses less than 1.6 dB, with two pole equivalent responses, have been demonstrated at frequencies between 1 and 2 GHz. These filters, using aluminum nitride as the piezoelectric, are approximately 1 mm2 in area and designed for a 50-Ω impedance level
Keywords :
crystal filters; crystal resonators; microwave integrated circuits; thin film devices; 1 to 2 GHz; 1.6 dB; 50 ohm; GaAs; Si; design; device performance; low insertion loss filters; materials requirements; microwave integrated circuit; modeling; piezoelectric; stacked crystal filter; thin film resonator; two pole equivalent responses; Application specific integrated circuits; Crystalline materials; Gallium arsenide; Insertion loss; Microwave devices; Microwave filters; Microwave integrated circuits; Resonator filters; Thin film circuits; Transistors;
Conference_Titel :
Ultrasonics Symposium, 1988. Proceedings., IEEE 1988
Conference_Location :
Chicago, IL
DOI :
10.1109/ULTSYM.1988.49395