DocumentCode
3431109
Title
Use of test structures for characterising a novel photosensitive organometallic material for MOS processes
Author
Dicks, M.H. ; Broxton, G.M. ; Thomson, J. ; Lobban, J. ; Stevenson, J.T. ; Walton, A.J.
Author_Institution
Sch. of Eng. & Electron., Edinburgh Univ., UK
fYear
2003
fDate
17-20 March 2003
Firstpage
14
Lastpage
18
Abstract
A novel process is presented which produces platinum features using direct UV exposure of a photosensitive organometallic material. The deposited films are metallic and have a good adhesion to silicon dioxide. A test chip with MOS capacitors and sheet resistance structures fabricated using the new organometallic material has been characterised.
Keywords
MOS capacitors; MOS integrated circuits; adhesion; integrated circuit testing; MOS capacitors; MOS processes; adhesion; direct UV exposure; photosensitive organometallic material; sheet resistance structures; test chip; test structures; Etching; Inorganic materials; Materials testing; Metallization; Microelectronics; Physics; Platinum; Resists; Sheet materials; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2003. International Conference on
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-7653-6
Type
conf
DOI
10.1109/ICMTS.2003.1197362
Filename
1197362
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