Title :
Test structures for quantum efficiency characterization for silicon image sensors
Author :
Odiot, F. ; Bonnouvrier, J. ; Augier, C. ; Raynor, J.M.
Author_Institution :
Central R&D, ST Microelectron., Crolles, France
Abstract :
To study the spectral response, test structures are specially designed. This paper presents quantum efficiency results for different kind of N-well/P-epi diodes. A comparison is made between a diode under active and under STI with or without salicidation. The impact of the design (different N-well geometries) and two reading nodes (CMOS and NMOS) are also studied. These measurements are then compared with the ISE simulation using a 2D simulation program DIOS.
Keywords :
elemental semiconductors; image sensors; semiconductor device models; semiconductor device testing; silicon; DIOS; ISE simulation; N-well geometries; image sensors; quantum efficiency characterization; reading nodes; spectral response; test structures; Current measurement; Diodes; Electrons; Image sensors; Optical sensors; Photodiodes; Pixel; Power measurement; Silicon; Testing;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197366
