Title :
Discharging and recharging of anomalous positive charges in MOSFETs
Author :
Wu, Yongjun ; Xu, Minwen ; Tan, Changhua ; Wei, Jianlin ; Liang, Yi ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias
Keywords :
MOSFET; electric breakdown; semiconductor device reliability; MOSFET; anomalous positive charges; discharging; recharging; recharging bias; Character generation; Current measurement; Degradation; Electrons; MOSFETs; Microelectronics; Stress measurement; Time measurement; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785880