DocumentCode :
343159
Title :
Discharging and recharging of anomalous positive charges in MOSFETs
Author :
Wu, Yongjun ; Xu, Minwen ; Tan, Changhua ; Wei, Jianlin ; Liang, Yi ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
1998
fDate :
1998
Firstpage :
301
Lastpage :
303
Abstract :
The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias
Keywords :
MOSFET; electric breakdown; semiconductor device reliability; MOSFET; anomalous positive charges; discharging; recharging; recharging bias; Character generation; Current measurement; Degradation; Electrons; MOSFETs; Microelectronics; Stress measurement; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785880
Filename :
785880
Link To Document :
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