Title :
A new simple method to optimize the parameters of deep-submicron MOSFETs
Author :
Wensong, Chen ; Li Yenmei ; Lilin, Tian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper, we propose a new simple method to optimize the parameters of the deep-submicron MOSFETs, namely, maximizing the nominal driving current at constant worst case (i.e. considering technology fluctuation) off-state current. Although there are only one objective and one constraint in this optimizing procedure, the effects of subthreshold factor S, channel carrier mobility, source/drain resistance, drain induced barrier lowering (DIBL) and Vth roll-off are all considered. To demonstrate the capability of this method, it is used to optimize the source/drain junction depth for 0.1 μm MOSFET. The results show that a junction depth as shallow as 0.02 μm is needed to maximize the driving current for a uniform channel doped MOSFET
Keywords :
MOSFET; carrier mobility; optimisation; semiconductor device models; 0.02 micron; 0.1 micron; DIBL; channel carrier mobility; deep-submicron MOSFET; drain induced barrier lowering; driving current maximisation; junction depth; offstate current; optimizing procedure; parameters optimisation; source/drain resistance; subthreshold factor; threshold voltage rolloff; uniform channel doped MOSFET; CMOS technology; Constraint optimization; Design optimization; Fluctuations; Leakage current; MOSFET circuits; Microelectronics; Optimization methods; Scalability; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785919
