• DocumentCode
    3431789
  • Title

    Cost reduction and yield improvement by removing postash polymer residue from BEOL structures using inorganic chemicals

  • Author

    Haigermoser, C. ; Henry, Sally-Ann

  • Author_Institution
    SEZ, Xinzhu, Taiwan
  • fYear
    2002
  • fDate
    10-11 Dec. 2002
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    As finer architectures and higher aspect ratios result in the introduction of new materials, IC manufacturing processes must change to meet unprecedented higher requirements without adding cost and affecting throughput. This represents an enormous challenge to equipment design and chemical formulation development alike. Moreover, the transition to 300 mm wafer technology demands adaptation of 200-mm applications or even completely new process design. In the case of post-ash polymer removal in BEOL processing, a cost-effective approach applying novel inorganic mixtures on SEZ single-wafer tools has been found that enables shorter process times whilst ensuring wafer-to-wafer repeatability, low particle levels and even higher yields.
  • Keywords
    cost reduction; inorganic polymers; integrated circuit manufacture; surface cleaning; wafer bonding; 300 mm; BOEL structure; IC manufacturing; back-end-of-line structure; chemical formulation; cost reduction; inorganic chemicals; postash polymer residue removal; single-wafer tools; wafer technology; Costs; Digital signal processing; Electronics industry; Hafnium; Inorganic chemicals; Manufacturing processes; Polymers; Process design; Production; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Technology Workshop, 2002
  • Print_ISBN
    0-7803-7604-8
  • Type

    conf

  • DOI
    10.1109/SMTW.2002.1197396
  • Filename
    1197396