Study of the thermal drift of the offset voltage of silicon pressure sensor

Pressure sensors produced using microelectronic techniques, in particular those based on the piezoresistive effect of silicon, present a high gauge factor. However, the electrical behaviour of the sensor is highly dependent on the temperature gradient. Thus, they have also some limitations such as the offset voltage and its thermal drift. In this study, we present a theoretical approach and experiments to analyse the electrical response of a pressure sensor fabricated using monocrystalline silicon. This analysis is focused on the thermal behaviour of the offset voltage and its origins. It allows us to differentiate between the two kinds of the piezoresistors included in the Wheatstone bridge and to link their thermal coefficients to that of the thermal drift of the offset voltage