Title :
Evaluation of mobility in the MOSFET with high leakage current
Author :
Tonomura, O. ; Shimamoto, Y. ; Torii, K. ; Hiratani, M. ; Saito, S. ; Yugami, J.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We applied a transmission-line circuit model to MOSFETs with a high gate leakage current, and extracted the mobility precisely. The model was verified by a frequency dependence of the capacitance. We found that the channel length should be short enough to suppress the voltage drop along the channel. The obtained mobility using sets of test chips with different channel length with a 1.5 nm-thick gate oxide agreed well with theoretical calculations.
Keywords :
MOSFET; carrier mobility; leakage currents; semiconductor device models; semiconductor device reliability; 1.5 nm; MOSFET; channel length; frequency dependence; gate leakage current; mobility; test chips; transmission-line circuit model; voltage drop; Capacitance measurement; Circuit testing; Current measurement; Electrical resistance measurement; Insulation; Leakage current; MOSFET circuits; Parasitic capacitance; Transmission lines; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197407
