DocumentCode
3431965
Title
Evaluation of mobility in the MOSFET with high leakage current
Author
Tonomura, O. ; Shimamoto, Y. ; Torii, K. ; Hiratani, M. ; Saito, S. ; Yugami, J.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
2003
fDate
17-20 March 2003
Firstpage
91
Lastpage
94
Abstract
We applied a transmission-line circuit model to MOSFETs with a high gate leakage current, and extracted the mobility precisely. The model was verified by a frequency dependence of the capacitance. We found that the channel length should be short enough to suppress the voltage drop along the channel. The obtained mobility using sets of test chips with different channel length with a 1.5 nm-thick gate oxide agreed well with theoretical calculations.
Keywords
MOSFET; carrier mobility; leakage currents; semiconductor device models; semiconductor device reliability; 1.5 nm; MOSFET; channel length; frequency dependence; gate leakage current; mobility; test chips; transmission-line circuit model; voltage drop; Capacitance measurement; Circuit testing; Current measurement; Electrical resistance measurement; Insulation; Leakage current; MOSFET circuits; Parasitic capacitance; Transmission lines; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN
0-7803-7653-6
Type
conf
DOI
10.1109/ICMTS.2003.1197407
Filename
1197407
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