Title :
SOI wafer achieved by smart-cut process
Author :
Yingxue, Li ; Zhikuan, Zhang ; Weihua, Ni ; Xing, Zhang ; Yangyuan, Wang
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
The smart-cut process is an alternative route to the former silicon on insulator (SOI) material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics of the final structure are presented
Keywords :
ion implantation; proton effects; silicon-on-insulator; wafer bonding; SOI wafer; Si-SiO2; in-depth splitting; proton implantation; smart-cut process; temperature treatment; wafer bonding; Annealing; Chemicals; Delamination; Hydrogen; Rough surfaces; Silicon; Surface roughness; Surface treatment; Temperature distribution; Wafer bonding;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786123
