DocumentCode
3432083
Title
Dielectric hard mask etching with ArF photo resist
Author
Hsu, Leonard
Author_Institution
LAM Res. Corp., Hsinchu, Taiwan
fYear
2002
fDate
10-11 Dec. 2002
Firstpage
204
Lastpage
207
Abstract
The ArF photo resists are rapidly progressing just in time for the 0.1 μm device generation and beyond. There is a complex interaction between the lithographic performance and plasma etching process. This study develop a plasma etching process to etch dielectric hard mask with a commercial ArF resist and address the issue of limited etching resistance of the ArF resist.
Keywords
dielectric materials; lithography; masks; photoresists; semiconductor device manufacture; sputter etching; ArF photo resists; device generation; dielectric hard mask etching; etching resistance; lithographic process; plasma bias power; plasma etching; semiconductor manufacture; sidewall striations; Dielectrics; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Plasma waves; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN
0-7803-7604-8
Type
conf
DOI
10.1109/SMTW.2002.1197415
Filename
1197415
Link To Document