A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

The lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the building block of many categories of high voltage MOSFETs e.g. LDMOS, VDMOS. Here we report a new charge based analytical compact model for lateral asymmetric MOSFET (LAMOS). Numerical device simulations are used to validate the intrinsic MOS region of high voltage MOSFET for lateral doping gradient in the channel. The model shows good results in DC and most importantly in AC regime, especially the peaks in C_GD, C_OS and C_GG capacitances. The LAMOS model is also validated along with the drift model on the measured DC characteristics of high voltage LDMOS transistor