Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs

Author

Lai, H.C. ; Zous, N.K. ; Tsai, W.J. ; Lu, T.C. ; Wang, Tahui ; King, Y.C. ; Pan, Sam

Author_Institution

Adv. Device Eng. Dept., Macronix Int. Co. Ltd., Hsinchu, Taiwan

fYear

2003

fDate

17-20 March 2003

Firstpage

99

Lastpage

102

Abstract

The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFETs due to the increase of the direct tunneling, currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage Current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.

Keywords

MOSFET; electron traps; interface states; leakage currents; tunnelling; CP technique; average interface trap density; channel length; charge pumping method; direct tunneling currents; gate oxide thickness; gate pulsing frequency; gate pulsing window; interface states; parasitic leakage current; ultra-thin gate oxide MOSFETs; Charge measurement; Charge pumps; Current measurement; Electrodes; Frequency measurement; Interface states; Leakage current; MOSFET circuits; Pulse measurements; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2003. International Conference on

Print_ISBN

0-7803-7653-6

Type

conf

DOI

10.1109/ICMTS.2003.1197421

Filename

1197421