Title :
Application of the TRM self-calibration on standard silicon substrates
Author :
Gillon, Renaud ; Tatinian, William ; Landat, Benoît
Author_Institution :
AMI Semicond. bvba, Oudenaarde, Belgium
Abstract :
This paper reports the application of the: TRM self-calibration technique for the de-embedding of on-wafer measurements on bulk-silicon substrates, for the first time. Two major issues that historically prevented this, have been identified and solved. The new procedure is duly validated by comparison with the already established in-situ TRL calibration. It remedies the bandwidth limitation of TRL, still keeping the flexibility for moving reference planes.
Keywords :
S-parameters; calibration; integrated circuit measurement; Si; TRM self-calibration; bandwidth limitation; on-wafer measurements; reference planes; Ambient intelligence; Bandwidth; Calibration; Dielectric substrates; Frequency; Resistors; Scattering parameters; Silicon; Time measurement; Transmission line measurements;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197425