• DocumentCode
    3432300
  • Title

    BSIM3 RF models for MOS transistors: a novel technique for substrate network extraction

  • Author

    Rustagi, Subhash C. ; Liao, Huailin ; Shi, Jinglin ; Xiong, Yong Zhong

  • Author_Institution
    Inst. of Microelectron., Singapore, Singapore
  • fYear
    2003
  • fDate
    17-20 March 2003
  • Firstpage
    118
  • Lastpage
    123
  • Abstract
    This paper presents a novel technique for extraction of substrate network and other extrinsic elements of the RF model for the MOS transistors. RF measurements in the common-gate configuration of the MOS transistors are used for the extraction of the substrate network. The values of the extracted substrate network elements are found to consistently scale with number of fingers. The measured large signal behavior (Pin-Pout characteristics) compare very well with the one modeled by the extracted parameters.
  • Keywords
    MOSFET; UHF field effect transistors; UHF measurement; semiconductor device measurement; semiconductor device models; BSIM3 RF models; MOS transistors; RF measurements; common-gate configuration; fingers; large signal behavior; substrate network; substrate network extraction; CMOS technology; Capacitance; Circuit testing; Equivalent circuits; Fingers; MOSFETs; Microelectronics; Radio frequency; Resistors; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2003. International Conference on
  • Print_ISBN
    0-7803-7653-6
  • Type

    conf

  • DOI
    10.1109/ICMTS.2003.1197427
  • Filename
    1197427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3432300