Low frequency noise in collector current

Author

Takagi, K. ; Mizunami, T. ; Kurita, T. ; Doi, T.

Author_Institution

Fac. of Eng., Kyushu Inst. of Technol., Kitakyushu, Japan

fYear

1995

fDate

4-6 Dec 1995

Firstpage

351

Lastpage

354

Abstract

In order to reduce the low frequency excess noise in transistors, the effect of diffusion coefficient fluctuation in the neutral base region is analyzed. The space-charge effect and mobility fluctuation in the collector space-charge region are also taken into account for collector current noise analysis. The experimental results qualitatively agree with the analyzed ones in bipolar transistors. The phase noise measurements were also carried out and the noise reduction method is briefly discussed

Keywords

bipolar transistors; carrier mobility; electric noise measurement; phase noise; semiconductor device noise; space-charge-limited conduction; bipolar transistors; collector current; diffusion coefficient fluctuation; excess noise; low frequency noise; mobility fluctuation; neutral base region; noise analysis; noise reduction method; phase noise measurements; space-charge effect; Electrons; Equivalent circuits; Fluctuations; Frequency; Integrated circuit noise; Low-frequency noise; Noise generators; Noise measurement; Noise reduction; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International

Conference_Location

Omiya

Print_ISBN

0-7803-3622-4

Type

conf

DOI

10.1109/IEMT.1995.541060

Filename

541060