Title :
Low frequency noise in collector current
Author :
Takagi, K. ; Mizunami, T. ; Kurita, T. ; Doi, T.
Author_Institution :
Fac. of Eng., Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
In order to reduce the low frequency excess noise in transistors, the effect of diffusion coefficient fluctuation in the neutral base region is analyzed. The space-charge effect and mobility fluctuation in the collector space-charge region are also taken into account for collector current noise analysis. The experimental results qualitatively agree with the analyzed ones in bipolar transistors. The phase noise measurements were also carried out and the noise reduction method is briefly discussed
Keywords :
bipolar transistors; carrier mobility; electric noise measurement; phase noise; semiconductor device noise; space-charge-limited conduction; bipolar transistors; collector current; diffusion coefficient fluctuation; excess noise; low frequency noise; mobility fluctuation; neutral base region; noise analysis; noise reduction method; phase noise measurements; space-charge effect; Electrons; Equivalent circuits; Fluctuations; Frequency; Integrated circuit noise; Low-frequency noise; Noise generators; Noise measurement; Noise reduction; Semiconductor device noise;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
DOI :
10.1109/IEMT.1995.541060
