Title :
A hybrid table/analytical approach to MOSFET modelling
Author :
Bourenkov, Victor ; McCarthy, Kevin G. ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
In this paper, a new simple and accurate hybrid table/analytical model of the MOSFET drain current based on the interpolation of table parameters is proposed. The model has been implemented in the SPICE3f5 circuit simulator and performs well in DC simulations. This new hybrid table model has an accuracy similar to the well known BSIM3v3.2 model but requires no complex parameter extraction, and uses less memory for data storage than a fine-grid table model.
Keywords :
MOSFET; digital simulation; interpolation; semiconductor device models; DC simulations; MOSFET modelling; circuit simulator; drain current; fine-grid table model; hybrid table/analytical approach; interpolation; parameter extraction; table parameters; Analytical models; Circuit simulation; Educational institutions; Equations; MOSFET circuits; Parameter extraction; Random access memory; Read-write memory; Semiconductor process modeling; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197435
