Title :
New evaluation method for reliability of poly-Si thin film transistors using pico-second time-resolved emission microscope
Author :
Uraoka, Y. ; Hirai, N. ; Yano, H. ; Hatayama, T. ; Fuyuki, T.
Author_Institution :
Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We have analyzed degradation of n-channel TFTs under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission in the pulse fall edge for the first time. We have also obtained a hot electron current during the pulse fall using a device simulation that took the transient effect into consideration. Based on the reasonable agreement between the experimental emission intensity and the theoretical current, we proposed a new degradation model.
Keywords :
electric current; electron microscopy; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device testing; silicon; thin film transistors; transient analysis; degradation model; device simulation; dynamic stress; emission intensity; n-channel TFT; pico-second time-resolved emission microscope; poly-Si thin film transistors; pulse fall edge emission; pulse fall hot electron current; reliability evaluation method; transient effect; Degradation; Driver circuits; Fabrication; Frequency; Materials science and technology; Microscopy; Stress; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197457
