• DocumentCode
    3432985
  • Title

    The effect of stress intensity on package cracking in lead-on-chip (LOC) packages

  • Author

    Amagai, Masazumi

  • Author_Institution
    NPD Dept., Texas Instrum. Japan, Oita, Japan
  • fYear
    1995
  • fDate
    4-6 Dec 1995
  • Firstpage
    415
  • Lastpage
    420
  • Abstract
    The effect of stress intensity factors on package cracking failure was studied based on fracture mechanics. The mechanical stress has made the stability of novel lead-on-chip (LOC) packaging technologies a grave concern. The dominant issue is device failure related to package cracking caused by a severe thermal stress concentration due to mismatch of dissimilar materials. The stress singularity appears at an interfacial edge and also the tip of interfacial delamination. To investigate package cracking, the stress singularity fields and the stress intensity factors at the interfacial edge and the tip of delamination were analyzed and the primary factors affecting the criterion of package cracking were subsequently defined. The criterion obtained from the experiment and the simulated results was verified by experiments on different types of the epoxy molding compounds. The results of these characterizations and an explanation of the primary factors affecting package cracking are presented in this paper
  • Keywords
    crack-edge stress field analysis; cracks; delamination; fracture mechanics; integrated circuit packaging; stress analysis; cracking failure; delamination; epoxy molding compound; fracture mechanics; interfacial edge; lead-on-chip package; mechanical stress; mismatch; stability; stress intensity factor; thermal stress; tip; Circuit testing; Delamination; Instruments; Lab-on-a-chip; Lead; Plastic packaging; Polyimides; Temperature; Thermal stresses; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
  • Conference_Location
    Omiya
  • Print_ISBN
    0-7803-3622-4
  • Type

    conf

  • DOI
    10.1109/IEMT.1995.541075
  • Filename
    541075