High-power AlInGaAs-GaAs double and triple microstack lasers at 808 nm

Author

Hanke, C. ; Korte, L. ; Acklin, B. ; Behringer, M. ; Luft, J.

Author_Institution

Infineon Technol. Corp. Res., Munich, Germany

Volume

1

fYear

1999

fDate

1999

Firstpage

80

Abstract

The basic structure of a triple microstack laser is shown. Each independent laser consists ofa conventional LOC-SCH-structure with an AlInGaAs-AlInAs double quantum well as active layer designed for an emission wavelength around 808 nm. By optimizing the MOVPE growth process tunnel-junctions with a specific differential resistivity could be obtained which were suitable for the monolithic interconnection of the laser structures

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser transitions; quantum well lasers; vapour phase epitaxial growth; 808 nm; AlInGaAs-AlInAs; AlInGaAs-AlInAs double quantum well; AlInGaAs-GaAs; LOC-SCH-structure; MOVPE growth process; active layer; differential resistivity; emission wavelength; independent laser; laser structures; monolithic interconnection; triple microstack laser; triple microstack lasers; tunnel-junctions; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical pulses; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor laser arrays; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813486

Filename

813486