DocumentCode
3433098
Title
Efficient HFET power amplifier
Author
Virdee, Bal S. ; Virdee, Avtar S.
Author_Institution
Dept. of Comput., Commun. Technol. & Math., London Metropolitan Univ., UK
Volume
1
fYear
2005
fDate
4-6 Oct. 2005
Abstract
The design and performance of a high efficiency power amplifier operating in class-AB/F at X-band is presented. The single-ended 9.6-mm gate width HFET amplifier comprised of four state-of-the-art 2.4-mm unit-cell HFETs. The design was simulated using accurate small-and large-signal models of the 2.4-mm unit-cell HFET. Conventional microwave integrated circuit (MIC) technology was used to fabricate the amplifier. The correlation between the simulated and measured results is excellent. The amplifier exhibited power-added efficiency (PAE) of 42%, with an output power of 9 Watts at 1 dB gain compression-point, and a small-signal gain of 7 dB.
Keywords
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit modelling; 1 dB; 2.4 mm; 7 dB; 9 W; 9.6 mm; HFET amplifier; HFET power amplifier; microwave integrated circuit technology; power-added efficiency; unit-cell HFET; Circuit simulation; Gain; HEMTs; High power amplifiers; Integrated circuit technology; MODFETs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1608855
Filename
1608855
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