A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state

Author

McDaid, Liam J. ; Hall, S. ; Marsland, J.S. ; Eccleston, W. ; Alderman, J.C. ; Cook, K.R. ; Bunyan, R.J. ; Uren, M.J.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

fYear

1990

fDate

2-4 Oct 1990

Firstpage

19

Lastpage

20

Abstract

A simple model is presented using one-dimensional bipolar theory to predict the holding voltage for silicon-on-insulator MOSFETs operating in the latch state. The holding voltage is a function of channel length as predicted by the model, and good agreement with experimental data is obtained for a recombination lifetime of 0.7 ns and k=0.015. The model also predicts that if the lifetime is reduced to 0.4 ns the holding voltage is only slightly increased for short-channel devices suggesting that decreasing the lifetime in the body by external means (e.g., gold doping) has little effect for small gate lengths. In addition the model can also predict the temperature dependence of the holding voltage

Keywords

carrier lifetime; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFET; Si-SiO₂; channel length; holding voltage; latch state; model; one-dimensional bipolar theory; recombination lifetime; temperature dependence; Circuits; Equations; Ionization; Latches; MOSFETs; Neodymium; P-n junctions; Predictive models; Radar; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145688

Filename

145688