Single event charge enhancement in SOI devices

Author

Belhaddad, H. ; Gaillard, R. ; Poirault, G. ; Poncet, A.

Author_Institution

Nucletudes, SA, Les Ulis, France

fYear

1990

fDate

2-4 Oct 1990

Firstpage

27

Lastpage

28

Abstract

Studies of single-particle ion effects in SOI (silicon-on-insulator) devices show that a new mechanism can contribute to soft error rates: the electron-hole pairs generated in the silicon substrate can charge the back Si-SiO₂-Si capacitor. An analysis with the 2-D device simulator JUPIN shows that the bulk Si substrate current contribution to the charging current is greater than the normal photocurrent created in the drain-body junction. This current is important in the inversion mode and is still present but reduced in the accumulation mode. An analytical model has been developed to relate the current characteristics to physical parameters of the SOI structure

Keywords

insulated gate field effect transistors; ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor-insulator boundaries; 2-D device simulator; JUPIN; SOI devices; Si-SiO₂; Si-SiO₂-Si capacitor; accumulation mode; electron-hole pairs; inversion mode; model; single event charge enhancement; single-particle ion effects; soft error rates; Analytical models; Capacitors; Error analysis; Geometry; Ionization; Photoconductivity; Pulse generation; Radiation effects; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145692

Filename

145692