DocumentCode
3433739
Title
Voltage adjustable attenuation with low 1/f noise
Author
Ferre-Pikal, ES ; Walls, F.L.
Author_Institution
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear
1998
fDate
27-29 May 1998
Firstpage
186
Lastpage
191
Abstract
In this paper we describe voltage-controlled attenuator circuits using silicon p-n diodes as the variable resistor. We report the amplitude modulation (AM) and phase modulation (PM) noise sensitivities to power supply noise and to current noise. We also report the PM noise of these circuits as a function of the dc control voltage
Keywords
1/f noise; amplitude modulation; attenuators; circuit noise; electric noise measurement; elemental semiconductors; phase modulation; phase noise; phase shifters; semiconductor diodes; silicon; 1/f noise; PM noise; Si; Si p-n diodes; amplitude modulation; dc control voltage; noise sensitivities; phase modulation; power supply; variable resistor; voltage-controlled attenuator circuits; Amplitude modulation; Attenuation; Attenuators; Circuit noise; Diodes; Noise level; Phase noise; Resistors; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International
Conference_Location
Pasadena, CA
ISSN
1075-6787
Print_ISBN
0-7803-4373-5
Type
conf
DOI
10.1109/FREQ.1998.717903
Filename
717903
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