Title :
Insulated gate triac: device operation and applications
Author :
Ajit, J.S. ; Dutta, R. ; Kinzer, D.
Author_Institution :
Power Integrations Inc., Sunnyvale, CA, USA
Abstract :
A new three-terminal power switch is described. The MOS-gated bi-directional device has forward and reverse conducting paths that utilize the same area, thus saving silicon space significantly. A single MOS-gate controls the current flow in both the forward and reverse directions. Two examples of power electronic applications that benefit from the use of this device are briefly discussed
Keywords :
MOS-controlled thyristors; power convertors; power semiconductor switches; uninterruptible power supplies; MOS-gated bidirectional device; Si; current flow; device applications; device operation; forward conducting path; insulated gate triac; power electronic applications; reverse conducting path; silicon space; three-terminal power switch; Anodes; Bidirectional control; Bridge circuits; Cathodes; Insulation; MOSFETs; Rectifiers; Silicon; Thyristors; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703154
