DocumentCode :
3433852
Title :
Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)
Author :
Giraud, S. ; Courreges, S. ; Cros, D. ; Madrangeas, V.
Author_Institution :
IRCOM - UMR, Limoges, France
Volume :
1
fYear :
2005
fDate :
4-6 Oct. 2005
Abstract :
The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.
Keywords :
circuit CAD; ferroelectric materials; method of lines; microwave devices; thin films; 2D analysis; ferroelectric materials; ferroelectric microwave devices; method of line; permittivity-dc electric field dependence; thin-film planar microwave devices; tunable planar devices; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Microstrip; Microwave devices; Microwave theory and techniques; Permittivity; Sputtering; Thin film devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
Type :
conf
DOI :
10.1109/EUMC.2005.1608906
Filename :
1608906
Link To Document :
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