Turn-off failure of IGBTs under clamped inductive load

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

1998

fDate

17-22 May 1998

Firstpage

1191

Abstract

This paper reports the mechanism of failure of IGBTs during clamped inductive switching stress. With the help of measurements and two-dimensional (2-D) numerical simulations, the turn-off failure of IGBTs under clamped inductive load is shown to occur due to thermally assisted carrier multiplication at the reverse biased planar p-base n-drift junction. The failure mechanism is unchanged even if the IGBT is susceptible to latch-up in static conditions

Keywords

failure analysis; insulated gate bipolar transistors; load (electric); power bipolar transistors; semiconductor device models; semiconductor device reliability; semiconductor device testing; switching; 2-D numerical simulations; IGBT; clamped inductive load; clamped inductive switching stress; latch-up; measurements; reverse biased planar p-base n-drift junction; static conditions; thermally assisted carrier multiplication; turn-off failure mechanism; Circuit simulation; Failure analysis; Insulated gate bipolar transistors; Manufacturing; Numerical simulation; Stress; Switching circuits; Testing; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE

Conference_Location

Fukuoka

ISSN

0275-9306

Print_ISBN

0-7803-4489-8

Type

conf

DOI

10.1109/PESC.1998.703156

Filename

703156