Microstructural evolution of oxides during processing of oxygen implanted SOI material

Author

Krause, S.J. ; Visisterngtrakul, S. ; Cordts, B.F. ; Roitman, P.

Author_Institution

Arizona State Univ., Tempe, AZ, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

47

Lastpage

48

Abstract

Silicon-on-insulator (SOI) material fabrication by oxygen implantation (SIMOX) is addressed. Formation and growth of the buried oxide, formation and evolution of oxygen bubbles in the top silicon layer, and precipitate evolution and elimination during ramping and annealing are considered. Recent work is summarized on the effects of processing conditions on oxide evolution. Specifically, effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on the structure of the buried oxide and its interfaces are discussed

Keywords

annealing; bubbles in solids; elemental semiconductors; integrated circuit technology; interface structure; ion implantation; precipitation; semiconductor technology; semiconductor-insulator boundaries; silicon; surface segregation; SIMOX; SOI material; Si-SiO₂; Si:O; annealing; bubble evolution; buried oxide formation; buried oxide structure; defect formation; effects of implantation conditions; effects of processing conditions; ion implantation; microstructural evolution; oxide evolution; precipitate evolution; ramping; Annealing; Biological materials; Bonding; Chemical engineering; Chemical technology; Integrated circuit technology; Oxygen; Semiconductor materials; Silicon on insulator technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145703

Filename

145703